Metal line of semiconductor device without production of high resistance compound due to metal diffusion and method for forming the same

ABSTRACT

A metal line includes a lower metal line formed on a semiconductor substrate. An insulation layer is formed on the semiconductor substrate having the lower metal line, and a metal line forming region exposing at least a portion of the lower metal line is defined in the insulation layer. A diffusion barrier is formed on a surface of the metal line forming region of the insulation layer and includes a WN x  layer, a W-N-B ternary layer, and a Ti-N-B ternary layer. A wetting layer is formed on the diffusion barrier and is made of one of a Ti layer or a TiN layer. An upper metal line is formed on the wetting layer to fill the metal line forming region of the insulation layer.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application claims priority to Korean patent applicationnumber 10-2008-0000337 filed on Jan. 2, 2008, which is incorporatedherein by reference in its entirety.

BACKGROUND OF THE INVENTION

The present invention relates generally to a metal line of asemiconductor device and a method for forming the same, and moreparticularly, to a metal line of a semiconductor device which canprevent a high resistance compound from being produced due to diffusionof different metals when joining the different metals with each otherand a method for forming the same.

In a semiconductor device, metal lines are formed to electricallyconnect elements or lines with each other. Contact plugs are formed toconnect lower metal lines and upper metal lines with each other. As theintegration level of the semiconductor continues to increase, the aspectratio of a contact hole, in which a contact plug is formed, graduallyincreases. As a result, the difficulty and the importance of a processfor forming the metal line and the contact plug have been noted.

The metal line of a semiconductor device is usually formed of aluminumor tungsten because both have good electrical conductivity. Recently,research has been conducted regarding the use of copper to form themetal line of a semiconductor device because copper has excellentelectrical conductivity and copper has a low resistance when compared toaluminum and tungsten. Forming the metal line of a semiconductor devicewith copper (Cu) can therefore solve the problems associated withconventional metal lines of highly integrated semiconductor deviceshaving high operating speed such as RC signal delay.

It is difficult to dry-etch copper into a wiring pattern, and thereforeto form a metal line using copper a damascene process is employed.

In the damascene process, a metal line forming region is formed byetching an interlayer dielectric, and a metal line is formed by fillinga metal layer (i.e., a copper layer) in the metal line forming region.Here, the metal line forming region can be formed through one of asingle damascene process and a dual damascene process. In particular, inthe dual damascene process, an upper metal line and a contact plug forconnecting the upper metal line and a lower metal line can besimultaneously formed. Also, since surface undulations that are produceddue to the presence of the metal line can be removed, a subsequentprocess can be conveniently conducted.

When forming a multi-layered metal line using the damascene process,copper may be used as the material for a lower metal line and aluminumis used as the material for an upper metal line, when different metalsare joined with each other as described above, a high resistancecompound may be produced due to diffusion of the respective metals.Therefore, in order to prevent the high resistance compound from beingproduced, a diffusion barrier must be formed on the interface of thelower metal line made of a copper layer and the upper metal line made ofan aluminum layer. Generally, a Ti or TiN layer, which is depositedthrough sputtering, is used as the diffusion barrier.

Further, the diffusion barrier must have a sufficient thickness tostably perform its function. However, while it is possible to preventthe production of a high resistance compound when the diffusion barrierhas a sufficient thickness, as the thickness of the diffusion barrier isincreased, the proportional thickness of the aluminum layer decreases,and in this case contact resistance cannot be decreased sufficiently.

Conversely, to improve the decrease in the contact resistance problem,the thickness of the diffusion barrier may be reduced. However, due tothe diffusion of aluminum, of which the upper metal line is formed,voids can be formed in the aluminum layer and a high resistance compoundis likely produced when the diffusion barrier thickness is reduced. As aresult, the contact resistance is increased and both the semiconductordevice characteristics and reliability will deteriorate.

SUMMARY OF THE INVENTION

Embodiments of the present invention include a metal line of asemiconductor device which can improve the characteristics of adiffusion barrier and a method for forming the same.

Also, embodiments of the present invention include a metal line of asemiconductor device which can improve the characteristics and thereliability of a semiconductor device and a method for forming the same.

In one embodiment of the present invention, a metal line of asemiconductor device comprises a lower metal line formed on asemiconductor substrate; an insulation layer formed on the resultantsemiconductor substrate and having a metal line forming region whichexposes at least a portion of the lower metal line; a diffusion barrierformed on a surface of the metal line forming region of the insulationlayer and having a WN_(x) layer, a W-N-B ternary layer and a Ti-N-Bternary layer; a wetting layer formed on the diffusion barrier and madeof any one of a Ti layer or a TiN layer; and an upper metal line formedon the wetting layer to fill the metal line forming region of theinsulation layer.

The lower metal line comprises a copper layer, and the upper metal linecomprises an aluminum layer.

In the WN_(x) layer, x has a range of 0.3˜3.0.

In another embodiment of the present invention, a metal line of asemiconductor device comprises a lower metal line formed on asemiconductor substrate; an insulation layer formed on the resultantsemiconductor substrate and having a metal line forming region whichexposes at least a portion of the lower metal line; a diffusion barrierformed on a surface of the metal line forming region of the insulationlayer and having a WN_(x) layer, a W-N-B ternary layer and a Ta-N-Bternary layer; a wetting layer formed on the diffusion barrier and madeof any one of a Ta layer or a TaN layer; and an upper metal line formedon the wetting layer to fill the metal line forming region of theinsulation layer.

The lower metal line comprises a copper layer, and the upper metal linecomprises an aluminum layer.

In the WN_(x) layer, x has a range of 0.3˜3.0.

In still another embodiment of the present invention, a method forforming a metal line of a semiconductor device comprises the steps offorming a lower metal line on a semiconductor substrate; forming aninsulation layer having a metal line forming region which exposes atleast a portion of the lower metal line, on the resultant semiconductorsubstrate; forming a WN_(x) layer and a W-N-B ternary layer on theinsulation layer including a surface of the metal line forming region;forming a wetting layer on the W-N-B ternary layer, which is made of anyone of a Ti layer or a TiN layer; annealing the resultant semiconductorsubstrate which is formed with the wetting layer, and thereby forming aTi-N-B ternary layer on a lower end of the wetting layer, whichconstitutes a diffusion barrier along with the WN_(x) layer and theW-N-B ternary layer; and forming an upper metal line on the wettinglayer to fill the metal line forming region.

The lower metal line comprises a copper layer, and the upper metal linecomprises an aluminum layer.

In the WN_(x) layer, x has a range of 0.3˜3.0.

The WN_(x) layer is formed through any one of PVD, CVD, and ALD.

The WN_(x) layer is formed to a thickness of 30˜500 Å.

The W-N-B ternary layer is formed by penetrating boron into the WN_(x)layer.

The boron penetration is implemented through annealing that usesboron-based gas or through plasma processing.

The boron-based gas comprises B₂H₆.

The W-N-B ternary layer is formed to have a thickness corresponding to10˜100% of the thickness of the WN_(x) layer.

The wetting layer is formed through any one of PVD, CVD and ALD.

The wetting layer is formed to a thickness of 100˜500 Å.

The Ti-N-B ternary layer is formed by penetrating boron and nitrogen ofthe W-N-B ternary layer into the wetting layer comprising the Ti layeror TiN layer.

The Ti-N-B ternary layer is formed to a thickness corresponding to10˜50% of the thickness of the wetting layer.

In another embodiment of the present invention, a method for forming ametal line of a semiconductor device comprises the steps of forming alower metal line on a semiconductor substrate; forming an insulationlayer having a metal line forming region which exposes at least aportion of the lower metal line, on the resultant semiconductorsubstrate; forming a WN_(x) layer and a W-N-B ternary layer on theinsulation layer including a surface of the metal line forming region;forming a wetting layer on the W-N-B ternary layer, which is made of anyone of a Ta layer or a TaN layer; annealing the resultant semiconductorsubstrate which is formed with the wetting layer, and thereby forming aTa-N-B ternary layer by transforming a lower portion of the wettinglayer, which constitutes a diffusion barrier along with the WN_(x) layerand the W-N-B ternary layer; and forming an upper metal line on thewetting layer to fill the metal line forming region.

The lower metal line comprises a copper layer, and the upper metal linecomprises an aluminum layer.

In the WN_(x) layer, x has a range of 0.3˜3.0.

The WN_(x) layer is formed through any one of PVD, CVD, and ALD.

The WN_(x) layer is formed to a thickness of 30˜500 Å.

The W-N-B ternary layer is formed by penetrating boron into the WN_(x)layer.

The boron penetration is implemented through annealing that usesboron-based gas or through plasma processing.

The boron-based gas comprises B₂H₆.

The W-N-B ternary layer is formed to have a thickness corresponding to10˜100% of the thickness of the WN_(x) layer.

The wetting layer is formed through any one of PVD, CVD and ALD.

The wetting layer is formed to a thickness of 100˜500 Å.

The Ta-N-B ternary layer is formed by penetrating boron and nitrogen ofthe W-N-B ternary layer into the wetting layer comprising the Ta layeror TaN layer.

The Ta-N-B ternary layer is formed to a thickness corresponding to10˜50% of the thickness of the wetting layer.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view showing a metal line of a semiconductordevice in accordance with an embodiment of the present invention.

FIGS. 2A through 2G are cross-sectional views showing the processes of amethod for forming a metal line of a semiconductor device in accordancewith another embodiment of the present invention.

DESCRIPTION OF SPECIFIC EMBODIMENTS

Hereafter, the specific embodiments of the present invention will bedescribed in detail with reference to the attached drawings.

FIG. 1 is a cross-sectional view showing a metal line of a semiconductordevice in accordance with an embodiment of the present invention.

Referring to FIG. 1, an interlayer dielectric 102 and a polish stoplayer 104 are sequentially formed on a semiconductor substrate 100 whichis formed with an understructure (not shown) including transistors. Afirst metal line forming region D is defined in the interlayerdielectric 102 and the polish stop layer 104. A lower metal line 108comprising a copper layer is formed in the first metal line formingregion D. The reference numeral 106 designates a barrier layer forpreventing the diffusion of copper.

An etch stop layer 110 and an insulation layer 112 are sequentiallyformed on the polish stop layer 104 including the lower metal line 108.A second metal line forming region D′ is defined in the insulation layer112 and the etch stop layer 110 to expose at least a portion of thelower metal line 108. An upper metal line 124 comprising an aluminumlayer is formed on the insulation layer 112 including the second metalline forming region D′.

A diffusion barrier 120 is formed on the surface of the insulation layer112 including the second metal line forming region D′, on which theupper metal line 124 is formed. In the present embodiment, the diffusionbarrier 120 may be a stacked structure comprising a WN_(x) layer 114, aW-N-B ternary layer 116, and a Ti-N-B ternary layer 118. Alternatively,the diffusion barrier 120 may be a stacked structure comprising a WN_(x)layer 114, a W-N-B ternary layer 116, and a Ta-N-B ternary layer (notshown). In the WN_(x) layer 114, x has a range of 0.3˜3.0. A wettinglayer 122 comprising any one of a Ti layer, a TiN layer, a Ta layer, anda TaN layer is formed on the diffusion barrier 120 having the abovestacked structure. Together the lower metal line 108 and the upper metalline 124 constitute a metal line 150.

As described above, when copper is used as the material for a lowermetal line and aluminum is used as the material for an upper metal line,in the present invention, a stacked structure including a WN_(x) layer,a W-N-B ternary layer, and a Ti-N-B ternary layer, or a stackedstructure including a WN_(x) layer, a W-N-B ternary layer, and a Ta-N-Bternary layer, is formed as a diffusion barrier 120 on the interface ofthe lower metal line and the upper metal line. Further, in the presentinvention, a wetting layer comprising any one of a Ti layer, a TiNlayer, a Ta layer, and a TaN layer is formed on the diffusion barrier120.

The diffusion barrier 120 comprising the stack of the WN_(x) layer, theW-N-B ternary layer, and the Ti-N-B ternary layer, or the stack of theWN_(x) layer, the W-N-B ternary layer, and the Ta-N-B ternary layer,prevents the diffusion between different metals reliably while alsodecreasing the thickness of the diffusion barrier 120 when compared to aconventional diffusion barrier comprising a Ti or TiN layer depositedthrough sputtering. Additionally, the wetting layer allows thedeposition of the aluminum layer constituting the upper metal line to becarried out continuously.

Therefore, in the present invention, it is possible to prevent a highresistance metal compound from being formed or produced on the interfaceof different metals and it is possible to prevent voids from beingformed in the aluminum layer constituting the upper metal line. As aresult, in the present invention, it is possible to improve both thecharacteristics and the reliability of a semiconductor device bypreventing contact resistance from increasing.

FIGS. 2A through 2G are cross-sectional views showing the processes of amethod for forming a metal line of a semiconductor device in accordancewith another embodiment of the present invention. The method will bedescribed below.

Referring to FIG. 2A, an interlayer dielectric 202 is formed on asemiconductor substrate 200, which is formed with an understructureincluding transistors, and a polish stop layer 204 is formed on theinterlayer dielectric 202. A first metal line forming region D, in whicha lower metal line is to be formed, is defined by etching the polishstop layer 204 and the interlayer dielectric 202. The first metal lineforming region D may be defined to have a single structure including atrench or a dual structure including a trench and a via-hole.

Referring to FIG. 2B, a TaN or Ta layer 206 is formed on the polish stoplayer 204 including the surface of the first metal line forming region Dto prevent diffusion of copper. A metal layer, for example a copperlayer 208 a, for forming a lower metal line is deposited on the TaN orTa layer 206 to fill the first metal line forming region D. It ispreferred that the deposition of the copper layer 208 a be implementedthrough electroplating after depositing a seed layer on the TaN or Talayer 206.

Referring to FIG. 2C, a lower metal line 208 is formed in the firstmetal line forming region D by removing the copper layer 208 a and theTaN or Ta layer 206 through a chemical mechanical polishing (CMP)process until the polish stop layer 204 is exposed. An etch stop layer210 is formed on the lower metal line 208, including the TaN or Ta layer206, and the polish stop layer 204.

Referring to FIG. 2D, an insulation layer 212 is formed on the etch stoplayer 210, then a second metal line forming region D′ is defined toexpose at least a portion of the lower metal line 208 by etching theinsulation layer 212 and the etch stop layer 210.

Referring to FIG. 2E, a WN_(x) layer 214 is formed on the insulationlayer 212 and the surface of the second metal line forming region D′defined by the prior etching of the etch insulation layer 212 and thelower etch stop layer 210. The WN_(x) layer 214 comprises anitrogen-rich layer with x having a range of 0.3˜3.0 and the WN_(x)layer is formed to a thickness of 30˜500 Å. The WN_(x) layer 214 can beformed in several ways, three exemplary ways will be described below.

First, the WN_(x) layer 214 can be formed through physical vapordeposition (PVD). In this case, ionized PVD (I-PVD) having excellentbottom coverage is adopted, and reactive sputtering is conducted usingN₂ gas at a temperature of 100˜300° C. under pressure of 1˜100 mTorr.

Second, the WN_(x) layer 214 can be formed through chemical vapordeposition (CVD). In this case, tungsten and nitride source gases aresupplied at a temperature of 200˜400° C. under pressure of 1˜40 Torr,WF₆ is used as the tungsten source gas, borane derivatives (e.g.,diborane, decaborane, tetraborane, heptaborane, and pentaborane) orsilane derivatives (e.g., silane, disilane, and Si₂H₂Cl₂) are used asthe reduction gas of WF₆, and NH3 or N₂H₄ is used as the nitride sourcegas.

Third, the WN_(x) layer 214 can be formed through atomic layerdeposition (ALD). In this case, as in the case of the CVD, ALD isconducted using tungsten and nitride source gases at a temperature of200˜400° C. under pressure of 1˜40 Torr. WF₆ is used as the tungstensource gas, borane derivatives (e.g., as diborane, decaborane,tetraborane, heptaborane, and pentaborane) or silane derivatives (e.g.,silane, disilane, and Si₂H₂Cl₂) are used as the reduction gas of WF₆,and NH3 or N₂H₄ is used as the nitride source gas. At this time, a purgegas such as argon is alternately supplied during the supplying of thesource gases. That is to say, the WN_(x) layer 214 is formed bysequentially and repeatedly carrying out: WF₆ supply, Ar purge, WF₆reductant gas supply, Ar purge, nitride source gas supply, and Ar purge.The sequence of WF₆ supply, WF₆ reductant gas supply, and nitride sourcegas is an example of one sequence that may be carried out according tothe present invention, it should be understood that the sequence ofsupply may be changed according to embodiments of the present invention.

A W-N-B ternary layer 216 is formed on the surface of the WN_(x) layer214 by penetrating boron into the WN_(x) layer 214. The boronpenetration into the WN_(x) layer 214 is implemented through anannealing that uses boron-based gas, such as B₂H₆, or through plasmaprocessing. The W-N-B ternary layer 216 is formed to have a thickness inthe range of 10˜100% of the thickness of the WN_(x) layer 214.

Referring to FIG. 2F, a wetting layer 222 comprising any one of a Tilayer, a TiN layer, a Ta layer, and a TaN layer is formed on the W-N-Bternary layer 216 through any one of PVD, CVD, and ALD to a thickness of100˜500 Å. By annealing the resultant semiconductor substrate 200,having the wetting layer 222 formed thereon, a Ti-N-B ternary layer 218or a Ta-N-B ternary layer (not shown) is formed on the lower end of thewetting layer 222, which comes into contact with the W-N-B ternary layer216. As a result, a diffusion barrier 220, which comprises the stack ofthe WN_(x) layer 214, the W-N-B ternary layer 216, and the Ti-N-Bternary layer 218, or alternatively the stack of the WN_(x) layer 214,the W-N-B ternary layer 216, and the Ta-N-B ternary layer, is formed.

The Ti-N-B ternary layer 218 or the Ta-N-B ternary layer is formed dueto the fact that boron and nitrogen of the W-N-B ternary layer 216penetrate into the wetting layer 222 comprising any one of the Ti layer,TiN layer, Ta layer, and TaN layer. The Ti-N-B ternary layer 218 or theTa-N-B ternary layer is formed to a thickness corresponding to 10˜50% ofthe thickness of the wetting layer 222.

Referring to FIG. 2G, a metal layer, for example an aluminum layer, foran upper metal line is deposited on the wetting layer 222 to fill thesecond metal line forming region D′. Then, an upper metal line 224 isformed by etching the aluminum layer, the wetting layer 222, and thediffusion barrier 220. As a result, the formation of a metal line 250according to the embodiment of the present invention is completed.

As is apparent from the above description, in the present invention,when copper is used as the material for a lower metal line and aluminumis used as the material for an upper metal line, the stacked structureof a WN_(x) layer, a W-N-B ternary layer, and a Ti-N-B ternary layer, oralternatively the stacked structure of a WN_(x) layer, a W-N-B ternarylayer, and a Ta-N-B ternary layer, is formed as a diffusion barrier onthe interface of the lower metal line and the upper metal line. Awetting layer is also formed on the diffusion barrier.

In this case, in the present invention, it is possible to form adiffusion barrier having excellent diffusion barrier characteristics,when compared to a conventional diffusion barrier comprising a Ti or TiNlayer formed through a sputtering process. Therefore, in the presentinvention, since it is possible to prevent a high resistance metalcompound from being produced, the increase of the contact resistanceassociated with the conventional device can be prevented. Also, in thepresent invention, void-free aluminum plug can be formed because thewetting layer allows the deposition of an aluminum layer constitutingthe upper metal line to be carried out continuously. As a consequence,in the present invention, the formation of the upper metal line can bestably and easily implemented. As a result, in the present invention, itis possible to improve the characteristics and the reliability of asemiconductor device.

Although specific embodiments of the present invention have beendescribed for illustrative purposes, those skilled in the art willappreciate that various modifications, additions and substitutions arepossible, without departing from the scope and the spirit of theinvention as disclosed in the accompanying claims.

What is claimed is:
 1. A method for forming a metal line structure of asemiconductor device, comprising the steps of: forming a lower metalline on a semiconductor substrate; forming an insulation layer having ametal line forming region on the resultant semiconductor substrate,wherein the metal line forming region exposes at least a portion of thelower metal line; forming a WN_(x) layer and a W-N-B ternary layer onthe insulation layer including a surface of the metal line formingregion; forming a wetting layer on the W-N-B ternary layer, the wettinglayer comprising one of a Ti layer and a TiN layer; annealing theresultant semiconductor substrate which is formed with the wettinglayer, such that a Ti-N-B ternary layer is formed by transforming alower portion of the wetting layer, wherein the Ti-N-B ternary layer,the WN_(x) layer, and the W-N-B ternary layer constitute a diffusionbarrier; and forming an upper metal line on the wetting layer to fillthe metal line forming region.
 2. The method according to claim 1,wherein the lower metal line comprises a copper layer, and the uppermetal line comprises an aluminum layer.
 3. The method according to claim1, wherein in the WN_(x) layer, x has a range of 0.3 to 3.0.
 4. Themethod according to claim 1, wherein the W_(x) layer is formed to athickness in the range of 30 to 500 Å.
 5. The method according to claim1, wherein the W-N-B ternary layer is formed by penetrating boron intothe WN_(x) layer.
 6. The method according to claim 5, wherein the boronpenetration is implemented through one of an annealing that usesboron-based gas and a plasma processing.
 7. The method according toclaim 5, wherein the W-N-B ternary layer is formed to have a thicknessin the range of 10 to 100% of the thickness of the WN_(x) layer.
 8. Themethod according to claim 1, wherein the wetting layer is formed to athickness in the range of 100 to 500 Å.
 9. The method according to claim1, wherein the Ti-N-B ternary layer is formed by penetrating boron andnitrogen of the W-N-B ternary layer into the wetting layer comprisingone of the Ti layer and the TiN layer.
 10. The method according to claim9, wherein the Ti-N-B ternary layer is formed to a thickness in therange of 10 to 50% of the thickness of the wetting layer.
 11. A methodfor forming a metal line structure of a semiconductor device, comprisingthe steps of: forming a lower metal line on a semiconductor substrate;forming an insulation layer having a metal line forming region on theresultant semiconductor substrate, wherein the metal line forming regionexposes at least a portion of the lower metal line; forming a WN_(x)layer and a W-N-B ternary layer on the insulation layer including asurface of the metal line forming region; forming a wetting layer on theW-N-B ternary layer, the wetting layer comprising one of a Ta layer anda TaN layer; annealing the resultant semiconductor substrate which isformed with the wetting layer, such that a Ta-N-B ternary layer isformed by transforming a lower portion of the wetting layer, wherein theTa-N-B ternary layer, the WN_(x) layer, and the W-N-B ternary layerconstitute a diffusion barrier; and forming an upper metal line on thewetting layer to fill the metal line forming region.
 12. The methodaccording to claim 11, wherein the lower metal line comprises a copperlayer, and the upper metal line comprises an aluminum layer.
 13. Themethod according to claim 11, wherein in the WN_(x) layer, x has a rangeof 0.3 to 3.0.
 14. The method according to claim 11, wherein the WN_(x)layer is formed to a thickness in the range of 30 to 500 Å.
 15. Themethod according to claim 11, wherein the W-N-B ternary layer is formedby penetrating boron into the WN_(x) layer.
 16. The method according toclaim 15, wherein the boron penetration is implemented through one of anannealing that uses boron-based gas and a plasma processing.
 17. Themethod according to claim 15, wherein the W-N-B ternary layer is formedto have a thickness in the range of 10 to 100% of the thickness of theWN_(x) layer.
 18. The method according to claim 11, wherein the wettinglayer is formed to a thickness in the range of 100 to 500 Å.
 19. Themethod according to claim 11, wherein the Ta-N-B ternary layer is formedby penetrating boron and nitrogen of the W-N-B ternary layer into thewetting layer comprising one of the Ta layer and the TaN layer.
 20. Themethod according to claim 19, wherein the Ta-N-B ternary layer is formedto a thickness in the range of 10 to 50% of the thickness of the wettinglayer.